Growth and characterization of ZnSe/CdSe/ZnSe quantum dots fabricated by using an alternate molecular beam supplying method

Ii M; Ohishi M; Yoneta M; Sato Y; Shintani M; Yoshino K; Saito H

Applied Surface Science, Vol.254, No.23, 7913-7917, 2008

DOI10.1016/j.apsusc.2008.03.152 Export Citation

Growth and characterization of ZnSe/CdSe/ZnSe quantum dots fabricated by using an alternate molecular beam supplying method

Ii M, Ohishi M, Yoneta M, Sato Y, Shintani M, Yoshino K, Saito H

ZnSe/CdSe/ZnSe structures inserted CdSe thin layer are fabricated using an alternate molecular beam supply (ALS). Examining the PL peak energy dependence on beam irradiation time in ALS cycle, we studied the initial stage of CdSe growth. When CdSe below the critical thickness is supplied on ZnSe grown on GaAs (1 0 0), two kinds of 2D islands (platelets) appear. We confirmed the alloying of 2D-CdSe islands and 3D-CdSe islands (dots) is prominent under Cd beam irradiation in ALS growth. (C) 2008 Elsevier B.V. All rights reserved.

Keywords:CdSe;quantum dot;molecular beam epitaxy;photoluminescence;critical thickness