Metal cluster complexes are chemically synthesized organometallic compounds, which have a wide range of chemical compositions with high molecular weight. Using a metal cluster complex ion source, sputtering characteristics of silicon bombarded with normally incident Ir-4(CO)(7)(+) ions were investigated. Experimental results showed that the sputtering yield at 10 keV was 36, which is higher than that with Ar+ ions by a factor of 24. In addition, secondary ion mass spectrometry (SIMS) of boron-delta-doped silicon samples and organic films of poly(methyl methacrylate) (PMMA) was performed. Compared with conventional O-2(+) ion beams, Ir-4(CO)(7)(+) ion beams improved depth resolution by a factor of 2.5 at the same irradiation conditions; the highest depth resolution of 0.9 nm was obtained at 5 keV, 45 degrees with oxygen flooding of 1.3 x 10 (4) Pa. Furthermore, it was confirmed that Ir-4(CO)(7)(+) ion beams significantly enhanced secondary ion intensity in high-mass region. (C) 2008 Elsevier B. V. All rights reserved.