Recent studies show that the self-assembled monolayer (SAM) is well suited to control the selectivity of chemical vapor deposition (CVD). Here, we reported the selective CVD for copper on the functionalized SAM surfaces (with -SH, -SS-, and -SO3H terminal groups). The -SS- and -SO3H terminal group surfaces were obtained through in situ chemical transformation of -SH terminal group surface of a 3-mercaptopropyltrimethoxysilane- SAM (MPTMS-SAM). As a result, the -SS- terminal group surface reduces copper deposition and the -SO3H terminal group surface enhances copper deposition comparing to the -SH terminal group surface. In addition, the MPTMS-SAM was irradiated by UV-light through a photo mask to prepare SH-group and OH-group regions. Then, copper films were deposited only on the SH-group region of the substrate in chemical vapor deposition. Finally, patterns of copper films were formed in the way of UV-light irradiation. These results are expected for use of selective deposition of copper metallization patterns in IC manufacturing processe s. (c) 2008 Elsevier B. V. All rights reserved.