beta-V2O5 films were successfully prepared on silicon substrates by direct current (DC) reactive magnetron sputtering. X-ray diffraction (XRD), Raman spectra and field emission scan electron spectroscopy (SEM) were used to characterize the samples. Results revealed that the deposition temperature significantly influenced on the crystal structure of V2O5 films in the growth process. When the deposition temperature was below 500 degrees C, the sputtered film exhibited the alpha-V2O5 structure. However, beta-V2O5 film was successfully obtained at 550 degrees C. High deposition temperature might provide V and O ions high mobility and energy in the reactive sputtering process, which induced the metastable beta-V2O5 phase formed. The thermal stability of beta-V2O5 film was studied by micro-Raman spectroscopy. The structure of sputtered beta V2O5 film was unstable under high temperature conditions (beyond 500 degrees C). (C) 2008 Elsevier B. V. All rights reserved.