The highly (1 0 0)-oriented BaTiO3 thin films were fabricated on LaNiO3(1 0 0)/Pt/Ti/SiO2/Si substrates under low-temperature conditions. Substrate temperatures throughout the fabrication process remained at or below 400 degrees C, which allows this process to be compatible with many materials commonly used in integrated circuit manufacturing. X-ray diffraction data provided the evidence for single BaTiO3 phase. Field-emission scanning electron microscopy was used to study the columnar structure of the films. The dielectric properties as a function of frequency in the range of 1 kHz to 1 MHz was obtained. The room temperature remanent polarization (2P(r)) and coercive field were found to be similar to 5 mu C/cm(2) and 50 kV/cm, respectively. The BTO film maintains an excellent fatigue-free character even after 109 switching cycles. (C) 2009 Elsevier B. V. All rights reserved.