CdS thin films obtained by thermal treatment of cadmium(II) complex precursor deposited by MAPLE technique

Rotaru A; Mietlarek-Kropidlowska A; Constantinescu C; Scarisoreanu N; Dumitru M; Strankowski M; Rotaru P; Ion V; Vasiliu C; Becker B; Dinescu M

Applied Surface Science, Vol.255, No.15, 6786-6789, 2009

DOI10.1016/j.apsusc.2009.02.062 Export Citation

CdS thin films obtained by thermal treatment of cadmium(II) complex precursor deposited by MAPLE technique

Rotaru A, Mietlarek-Kropidlowska A, Constantinescu C, Scarisoreanu N, Dumitru M, Strankowski M, Rotaru P, Ion V, Vasiliu C, Becker B, Dinescu M

Thin. lms of [Cd{SSi(O-Bu-t)(3)}(S2CNEt2)](2), precursor for semiconducting CdS layers, were deposited on silicon substrates by Matrix-Assisted Pulsed Laser Evaporation (MAPLE) technique. Structural analysis of the obtained. lms by Fourier transform infrared spectroscopy (FTIR) confirmed the viability of the procedure. After the deposition of the coordination complex, the layers are manufactured by appropriate thermal treatment of the system (thin film and substrate), according to the thermal analysis of the compound. Surface morphology of the thin. lms was investigated by atomic force microscopy (AFM) and spectroscopic-ellipsometry (SE) measurements. (C) 2009 Elsevier B.V. All rights reserved.

Keywords:Cadmium(II) coordination compound;MAPLE;Precursor for CdS layers;Thermal treatment;Spectroscopic-ellipsometry