In this investigation, an operating voltage as low as 5 V has been achieved for Oxide TFT with Y2O3 as a gate oxide and a-IGZO as an active layer. The OTFT has been fabricated at room temperature using RF sputter. The mobility and threshold voltages are 11.3 cm(2)/V s and 3.4 V for the device with W/L = 0.8, respectively. The annealing at 400 degrees C in N-2 containing 5% H-2 ambient has been utilized to improve the electrical performance of TFT. The on-off current which is determined by gate dielectric has been observed to be 10(4). It has also been observed that the dielectric properties of gate oxide deteriorate on annealing. The dielectric constant of Y2O3 is observed in the range between 5.1 and 5.4 measured on various devices. (c) 2009 Elsevier B.V. All rights reserved.