Pulsed laser deposition technique is used for deposition of tungsten-doped indium oxide films. The effect of film thickness on structural, optical and electrical properties was studied using X-ray diffraction (XRD), atomic force microscopy, UV-visible spectroscopy, and electrical measurements. X-ray diffraction study reveals that all the films are highly crystalline and oriented along (222) direction and the film crystallinity increases with increase in film thickness. Atomic force microscopy analysis shows that these films are very smooth with root mean square surface roughness of similar to 1.0 nm. Bandgap energy of the films depends on thickness and varies from 3.71 eV to 3.94 eV. It is observed that resistivity of the films decreases with thickness, while mobility increases. (C) 2009 Elsevier B.V. All rights reserved.