Thin films of InP were prepared onto glass and quartz substrates using laser ablation technique. Some of the prepared films were irradiated using a Co-60 gamma-ray source irradiation with a total dose of 100 kGy at room temperature. The as deposited and irradiated films were identified by scanning electron microscopy, SEM and X-ray diffraction, XRD. The SEM images have shown a nano-flower like structure for the as deposited films and influenced by the irradiation dose. The Optical characterizations of the as deposited and irradiated InP films were studied using spectrophotometric measurements of transmittance T(lambda) and reflectance, R(lambda) at normal incidence of light in the spectral range from 200 nm to 2500 nm. The refractive index, n, and the absorption index, k values were calculated using a modified computer program based on minimizing (Delta T)(2) and (Delta R)(2) simultaneously, within the desired accuracy. Analysis of the dispersion of the refractive index in the range 900 <= lambda <= 2500 was discussed in terms of the single oscillator model. The optical parameters, such as the dispersion energy, E-d, the oscillator energy, E-o, the high frequency dielectric constant, epsilon(infinity) and the lattice dielectric constant, epsilon(L) were evaluated for the as deposited and irradiated films. The allowed optical transitions were found to be direct for the as deposited and irradiated films with energy gaps of 1.35 eV and 1.54 eV, respectively. (C) 2009 Elsevier B.V. All rights reserved.