A photobleachable bilayer resist material based on a nonchemically amplified resist system was synthesized by copoly-merization of 3-methacryloxypropyl trimethoxysilane. 2-(2-diazo-3-oxobutyryloxy)ethyl methacrylate. and gamma-butyrolactonyl methacrylate. Upon UV irradiation, the resist film in the exposed region become insoluble in organic solvent by the reaction of methoxysilanes with carboxylic acids generated by photoinduced reaction of diazoketo groups. The initial lithographic evaluation of the resist showed the potential of this system for the next generation resist.