The dielectric properties of SrTiO3 thin films deposited on SrRuO3 seed layer were investigated. The SrTiO3 thin films were deposited by plasma-enhanced atomic layer deposition using Sr(C11H19O2)(2) and Ti(O-i-C3H7)(4) as precursors and O-2 plasma as an oxidant. The SrRuO3 seed layer was formed through deposition of an SrO layer on a RuO2 substrate and postannealing in O-2 ambient. As a result of introducing SrRuO3 seed layers, the dielectric constant of 10 nm thick SrTiO3 thin films increased to 83 compared with that of 16 and 50 for film deposited on Ru directly and seed formed on Ru substrate, respectively.