The influence of biaxial compressive stress on p-type metal-oxide-semiconductor field-effect transistors (MOSFETs) was investigated. It was found that drain current and hole mobility of p-type MOSFET with Si1-xGex raised source/drain and external applied mechanical stress significantly decreased due to the increase of effective conductive mass at room temperature. However, this phenomenon was inverted above 333 K. Because the hole can gain enough thermal energy to transmit to a higher energy level by intervalley scattering, its transport mechanism was dominated by lower effective mass at higher energy level.