Continuous Si homoepitaxy was realized without substrate heating by using dc magnetron sputtering. Si at least 10 mu m thick can be grown epitaxially on a Si substrate. Characterization by reflective high-energy electron diffraction, micro-Raman spectroscopy, and transmission electron microscopy showed that the epitaxial film exhibited good crystallinity. Electrons were shown to be the dominant species for surface bombardment in dc magnetron sputtering. It was suggested that energetic electron bombardment plays an important role in low-temperature and continuous-sputtering epitaxy. (C) 2008 The Electrochemical Society. [DOI: 10.1149/1.3054285] All rights reserved.