We have studied the fabrication of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) on 125 mu m thick graphite foil. The a-Si: H TFT fabricated on polyimide planarized graphite foil exhibited a field-effect mobility of 0.32 cm(2)/V s, a threshold voltage of 2.35 V, and subthreshold slope of 1.23 V/decade. The performance of the TFT on graphite foil is stable until bending it down to the radius of 5 mm, corresponding to the strain of 2.4%. The TFT on curved graphite foil can be freestanding on the table. (C) 2008 The Electrochemical Society. [DOI: 10.1149/1.3054333] All rights reserved.