High-quality ZnO films were grown on NiSi/Si as well as Si substrates, and their structural and optical properties were compared. Larger average grain size of ZnO was obtained on NiSi/Si. Further, differences in Raman spectroscopy were observed; the redshift of the E2 peak was 1 cm(-1) less in ZnO/NiSi/Si, and its noise-to-signal ratio was also greatly reduced. In addition, the photoluminescence emission measurement shows a narrow peak with 9 meV peak width, the mechanism of which was discussed correspondingly.