p-Type ZnO thin films were prepared on phosphorus (P)-doped poly-Si by sputter deposition under various ambient ratios of Ar and O-2 and subsequent annealing process at temperatures ranging from 400 to 600 degrees C. The effects of the ambient sputtering gas and annealing temperature on the electrical and material characteristics of ZnO films were investigated. The formation of p-ZnO film on P-doped poly-Si was confirmed through comparisons involving the conduction type of the ZnO film deposited on insulating SiO2. The film deposited in Ar ambient and annealed at 500 degrees C showed a maximum hole concentration of 5.92x10(19) cm(-3).