This paper reports on metal-insulator-metal (MIM) capacitors comprised of Al2O3/TiO2/Al2O3 laminate structure with postmetallization-annealing (PMA) treatment. By applying the laminate structure to TiO2 capacitors, deposition of the Al2O3 layer enables significant leakage current reduction while maintaining good electrical performance. For an Al2O3/TiO2/Al2O3 film with PMA treatment, the electrical characteristics can be further improved, which is mostly due to the passivation of the dielectric interface charges. We have achieved low leakage current of 6.4x10(-9) A/cm(2) at 1 V for 18.3 fF/mu m(2) density Al2O3/TiO2/Al2O3 MIM capacitors. These results meet the International Technology Roadmap for Semiconductors requirements (year 2018) of 10 fF/mu m(2) density and J/(CV)< 7 fA/(pFV).