TiO2 films were prepared on Pt/Ti/SiO2/Si substrates by radio-frequency reactive sputtering with a different gas mixture. Different constituents of crystalline phases of TiO2 were found by changing the oxygen content in a gas mixture. The influence of crystalline constituent on electrical and resistive switching properties of TiO2 was investigated. The Pt/TiO2/Pt capacitors show reversible and steady bistable resistance switching behavior. The leakage current in the high-resistance state is sensitive to the crystal phase composition of the TiO2 matrix; however, the current flowed through the films in the low-resistance state is hardly affected. Moreover, superior retention characteristics demonstrate the potential for nonvolatile memory applications.