A vast array of Cu nanorods with a diameter of 10-20 nm grown by an oblique angle deposition technique was utilized as an adhesive layer for bonding 200 mm Si wafers at low temperatures. The focus ion beam/scanning electron microscope images illustrate that the Cu nanorod array underwent coalescence readily upon a bonding temperature at 200 degrees C. Upon 400 degrees C, a dense Cu bonding layer with homogeneous structure was achieved. A fully dense bonding structure was also obtained upon a lower bonding temperature at 300 degrees C followed by a postannealing at 400 degrees C in a reducing ambient.