Tin-doped In2O3 (indium-tin oxide, ITO) transparent conducting films were deposited between 200 and 400 degrees C on stripe-patterned Si substrates by spray chemical vapor deposition. ITO films with a homogeneous tin composition and crystallinity were successfully fabricated. The step coverage increased as the deposition temperature decreased and reached 90% at 200 degrees C. Postdeposition annealing lowered the resistivity to 3.3x10(-4) Omega cm, which is approximately homogeneous because the measured resistance agreed well with the calculated one assuming the resistivity value of the film deposited on a flat surface and considering the film thickness of various portions. These films should contribute to optoelectric devices.