We obtained preferentially (220)-oriented yttria-stabilized zirconia (YSZ) buffer layers on glass substrates by pulsed laser deposition. These preferentially (220)-oriented YSZ buffer layers enabled us to grow preferentially (100)-oriented SrRuO3 bottom electrodes. On the preferentially (100)-oriented SrRuO3 bottom electrodes, we obtained preferentially c-oriented PbZr0.48Ti0.52O3 (PZT) thin films, which were confirmed by an X-ray diffraction experiment. The highly c-oriented PZT thin films exhibited a high ferroelectric polarization of about 32 mu m/cm(2). We also checked a high storage density of about 10 Tbit/in(2) with a minimum bit size below 8 nm with the highly c-oriented PZT thin films by electric force microscope.