High-dielectric Bi3NbO7 (BNO) thin films were deposited on Ni/Al/PES flexible substrates at low temperatures by nanocluster deposition (NCD) process. The Al(1x1 mm(2) top electrode size)/BNO(70 nm)/Ni/Al/polyethersulfon (PES) capacitors composed of BNO films deposited at 150 degrees C on Ni/Al/PES substrates exhibit a dielectric constant of 62 and a dissipation factor of 8.0% at 100 kHz. Capacitors with a top electrode size of 0.5x0.5 mm(2) exhibited a leakage current density of approximately 3x10(-4) A/cm(2) at -1.0 V. The dielectric and leakage properties of the Al/BNO/Ni/Al/PES capacitors with a top electrode size of 1x1 mm(2) were investigated with and without bending for 30 s. From the bending results, capacitors pushed at 0.3 cm apart at the original position exhibit no change in the dielectric and leakage current properties. Samples pushed at 0.6 cm exhibit the variations in the dielectric properties, maintaining the unchanged leakage current properties. Flexibility of the BNO films deposited on Ni/Al/PES flexible substrates by NCD process can be considered to apply for the flexible electronic devices.