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Electrochemical and Solid State Letters, Vol.12, No.5, H161-H164, 2009
Metallorganic Chemical-Vapor-Deposited BiFeO3 Films for Tunable High-Frequency Devices
We report the first use of a room-temperature liquid iron precursor, n-butylferrocene, to deposit polycrystalline BiFeO3 films by metallorganic chemical vapor deposition. From X-ray photoelectron spectroscopy, the Bi/Fe atomic ratio is observed to be similar to 1. Electrical measurements show that the films exhibit ferroelectric characteristics at room temperature with negligible charge leakage. Magnetic measurements reveal a room-temperature saturation magnetization of similar to 8 emu/cm(3) and provide evidence for a possible spin reorientation transition near 140 K. Data on magnetic-field dependence of dielectric constant at 18 GHz provide evidence for magnetic-ferroelectric coupling in the film, indicating potential for application in high-frequency tunable devices.
Keywords:bismuth compounds;magnetic thin films;magnetisation;magnetoelectric effects;MOCVD;multiferroics;permittivity