The current transport mechanism of Pt/CeO2/p-Ge metal-oxide-semiconductor devices is investigated. The results are based on the analyses of gate current vs gate voltage curves at temperatures ranging from 295 to 375 K. At low to medium electric fields (similar to 0.1 to 0.9 MV/cm) the main current conduction mechanism is Schottky emission, while Poole-Frankel conduction is the dominant mechanism at higher fields across the oxide (similar to 1.2 to 2.1 MV/cm). The barrier height (Phi(b)) at the Pt/CeO2 interface is found to be equal to 0.91 +/- 0.02 eV, while the trap energy level (Phi(t)) responsible for the Poole-Frenkel conduction is estimated to be around 0.60 +/- 0.03 eV.