We demonstrate high mobility and good stability sol-gel-processed and lithographically patterned amorphous zinc-tin oxide (a-ZTO) thin-film transistors (TFTs). The a-ZTO TFTs (W/L=100/5 mu m) have shown a carrier mobility >5 cm(2)/V s with an on/off current ratio greater than 10(8) and a subthreshold slope < 1.0 V. The devices including solution-processed poly(methyl methacrylate)/silica dual passivation layer on the active channel have typically shown threshold voltage variations < 0.5-1 V after 1 h current and voltage bias stressing.