p-Type Al-N co-doped ZnO[ZnO:(Al,N)] thin films are successfully fabricated by plasma immersion ion implantation technique assisted with co-doping method. Hole concentration, resistivity, and mobility of the optimum p-type ZnO:(Al,N) film obtained are 2.89x10(17) cm(-3), 6.87 cm, and 3.15 cm(2) V-1 s(-1), respectively. O-* plays an important role in the reactions of plasma for its production of N atoms. Implanted N atoms are activated by postannealing, occupy oxygen vacancies (V-O), and form nitrogen substitutions (N-O) at O sites.