Transparent Bi3NbO7 (BNO) thin films were grown on Al-doped ZnO (AZO)/Ag/AZO/poly(ether sulfone) (PES) (abbreviated as AAAP) transparent electrodes by the nanocluster deposition technique. The capacitors (Pt/BNO/AAAP) with BNO films grown at 100 degrees C show a dielectric constant of 24, a dissipation factor of 8% at 100 kHz, and a leakage current density of about 8x10(-6) A/cm(2) at an applied voltage of 1.0 V. The optical transmittances of the BNO/AAAP were exhibited above 80% at a wavelength of 550 nm. The mechanical stability of the BNO/AAA as well as the AAA electrode with the PES substrates through bending was ensured for flexible electronic device applications.