Journal of Applied Electrochemistry, Vol.39, No.9, 1545-1551, 2009
Electrochemical characteristics of boron doped polycrystalline diamond electrode sintered by high pressure and high temperature
The bulk B-doped polycrystalline diamond (PCD) electrode in this study was prepared by high-pressure, high-temperature (HPHT) technology. The PCD was sintered under HPHT conditions, using B-doped diamond powders and a metal catalyst as raw materials, then the metal solvent phase was dissolved by aqua regia. The morphology and composition of the PCD were investigated with a scanning electron microscope (SEM), X-ray diffraction (XRD), and energy dispersion spectrum (EDS). The results show that the sintered body possesses a polycrystalline structure with direct diamond-diamond bond and irregularly shaped pores of 1-10 mu m distributed on the grain boundaries after the metal solvent phase was removed. The cyclic voltammogram and electrochemical impedance spectroscopy of this B-doped electrode have been investigated. The B-doped PCD electrode exhibits stable electrochemistry in a KCl support solution over a wide potential range. The quasi-reversible reaction occurs on the electrode for the [Fe(CN)(6)](3-/4-) couples. The electrode process combines the diffusion-controlled mass transport plus the kinetic process. The electrochemical impedance spectroscopy (EIS) analysis shows the porous structure characteristic of the PCD electrode.
Keywords:High pressure;High temperature;Boron doped;Polycrystalline diamond;Porous electrode;Electrochemical