We present the results of a comprehensive study of distribution of zinc, resistivity, and photosensitivity in a Cd1-xZnxTe ingot grown by the vertical Bridgman method. We used several complementary methods, viz., glow discharge mass spectroscopy, photoluminescence, resistivity-, and photosensitivity-mapping, along with photo-induced current transient spectroscopy to characterize the material. We identified electronic levels in the bandgap responsible for compensation, recombination, and photosensitivity. (c) 2008 Elsevier B.V. All rights reserved.