5 wt% Zr-doped In2O3 (Zr-In2O3) films with thicknesses from 85 to 210 nm were grown on the 80 nm-thick ZnO-coated glass substrates at 160 degrees C by rf sputtering. The microstructures of the Zr-In2O3/ZnO bilayer films were studied using X-ray diffraction and atomic force microscopy. The ZnO buffer layers on the glass substrates exhibit (002) preferred orientation. The Zr-In2O3 films have highly (222)-textured structures on the ZnO-coated glass substrates. The electrical characteristics of Zr-In2O3 films are improved by lattice modulation with ZnO buffering. The resistivity is lowest 3.02 x 10(-4) Omega Cm for the 210 mn-thick Zr-In2O3 film on the ZnO-coated glass. The average transmittance in visible wavelength region is 83-86% for Zr-In2O3/ZnO bilayers with various Zr-In2O3 film thicknesses of 85-210 nm. The low-temperature processes of Zr-In2O3/ZnO bilayer films on the glass substrates have potential for application to opto-electronic devices. (c) 2008 Elsevier B.V. All rights reserved.