High growth rate GaN of 28 mu m/h was demonstrated by using an atmospheric pressure multi-wafer metal organic vapor phase epitaxy reactor. FWHM of X-ray diffraction of (0 0 2) and (1 0 2) reflection was about 250 and 400 arcsec for the layer grown with a growth Fate less than 12 mu m/h. FWHM for the sample with the highest growth rate of 28 mu m/h was 300 and 560 arcsec, respectively. Carbon contamination was increased up to 6 x 10(17) cm(-3) for 28 mu m/h sample as input V/III ratio was decreased in accordance to the increased growth rate. Limiting factors to the growth rate were discussed in comparison to hydride vapor phase epitaxy. (c) 2008 Elsevier B.V. All rights reserved.