The LiNbO3 [001] thin films were grown epitaxially on a sapphire [0 0 11 substrate by pulsed laser deposition. The influence of deposition parameters on the crystalline quality of films was studied. Good-quality films were obtained at a deposition temperature of 400 degrees C with an oxygen pressure of 50 Pa. The depositions at temperatures >450 degrees C, and at pressures higher as well as lower than 50 Pa, degrade crystalline quality due to the presence of thermal stresses and Li vacancies, respectively. As-deposited films were annealed with very slow rising and cooling rates (2 degrees C/h) at relatively low temperatures. The crystalline quality of thin films was enhanced greatly with annealing. (C) 2008 Elsevier B.V. All rights reserved.