Nd3+/V5+-cosubstituted Bi4Ti3O12 (Bi3.15Nd0.85Ti2.97V0.03O12, BNTV) thin films are prepared on Pt/Ti/SiO2/Si(100) substrates by a chemical solution deposition (CSD) technique. The structure and surface morphology of the films are analyzed using X-ray diffraction (XRD), Raman spectroscopy and scanning electron microscopy, respectively. The electrical properties of BNTV films are investigated as a function of annealing temperatures. The remanent polarization, dielectric constant and capacitance of the BNTV thin films increase with the increase of annealing temperatures in the range of 650-750 degrees C. After annealing at 750 degrees C, the BNTV film exhibits good polarization fatigue characteristics at least up to 1 x 10(10) switching cycles at a frequency of 100 kHz and excellent retention properties up to 1 X 10(5) S. (c) 2008 Elsevier B.V. All rights reserved.