We investigated the antimony incorporation in germanium at high concentration regime above the maximum equilibrium solid solubility of 1.2 x 10(19) cm(-3). As growth method molecular beam epitaxy at temperatures between 160 and 330 degrees C was used. Electrical active Sb incorporation up to 2 x 10(20) cm(-3) was obtained. At higher chemical Sb concentrations up to 6 x 10(20) cm(-3) only a fraction of the dopants is electrically active at room temperatures. (c) 2008 Elsevier B.V. All rights reserved.