GaSb1-yNy and GaAs1-y-zSbyNz alloys on GaSb substrates were grown by metalorganic vapor phase epitaxy (MOVPE) as potential materials for mid-infrared wavelength emission. Nitrogen incorporation Was found to increase with the presence of As in GaAsSbN when compared with that of GaSbN. Low-temperature (LT) photoluminescence (PL) measurements indicated the co-addition of nitrogen and arsenic reduced the energy bandgap relative to that of Gash. LT (16 K) PL emission near 2.25 mu m was observed from GaAsSbN with an arsenic content of similar to 10% and a nitrogen content of similar to 0.08%. (C) 2008 Elsevier B.V. All rights reserved.