Gallium-doped ZnO thin films were grown oil quartz substrates by metalorganic vapor phase epitaxy using diisopropylzinc (Di-PrZn) as a zinc source and tertiary butanol (t-BuOH) as ail oxygen source. Triethylgallium (TEG) was used as a gallium source, A vertical-type reactor with a high-speed rotating disk and a conventional horizontal-type reactor were used in these experiments. The growth temperature was 350 degrees C, and the growth pressure was 76 Torr. The range of Ga flow ratios [TEG]/([TEG]+[Di-PrZn]) was between 0% and 11%. The thin film properties were evaluated by Raman scattering, X-ray diffraction, Hall effect and transmittance measurements. The thin films grown by using these source materials exhibited a low resistivity up to 2.21 x 10(-4) Omega cm, and a high optical transparency over 80%. (C) 2008 Elsevier B.V. All rights reserved.