We demonstrate quantum-dot (QD)-based, optically pumped semiconductor disk lasers (SDLs) for wavelengths ranging from 950 to 1210 nm. QDs grown either in the submonolayer (SML) or in the Stranski-Krastanow (SK) regime are employed as active layers of the SDLs which are based on two different design concepts. Output power of up to 1.4 W continuous wave (CW) is achieved with an InAs/ GaAs-SML SDL at 1040 nm. Up to 21 InGaAs SK-QD layers within a single SDL gain structure are used to realize the ground-state CW lasing with 0.3 W at 1210 nm. The SK-QD-based SDL shows temperature and pump-power stable emission. Threshold and differential efficiency do not depend on heat-sink temperature. (c) 2008 Elsevier B.V. All rights reserved.