A heavily boron (B)-doped germanium (Ge) bulk crystal was grown by the Czochralski method. The B concentrations in the crystal were evaluated by measuring the carrier concentration with the Hall effect and resistance method. Maximum Solubility of B into Ge was estimated to be 2.5 x 10(18) cm(-3). The equilibrium segregation coefficient of Bin Ge was considered to be 5-6, much smaller than that reported previously. (C) 2008 Elsevier B.V. All rights reserved.