Good quality AgGa1-xInxSe2 (x=0.1-0.3) single crystals with 20 mm diameter and 60 man length have been grown by an improved Bridgman method, i.e. descending ampoule with rotation and the real-time temperature compensation technique. The melt temperature oscillation method (MTOM) was used to synthesize high-purity single-phase AgGa1-xInxSe2 polycrystal that is free of voids. The crystallization process was carried out in the two-layer quartz ampoule with a seed pocket. The temperature gradient at the growth interface in the furnace was normally 20 degrees C cm(-1) in the open bore, while it was 15 degrees C cm-1 with the ampoule in the furnace. The quality of the as-grown crystal was characterized by using X-ray diffraction, X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), infrared (IR) spectrophotometer, etc. It was found that there is a {12} cleavage face in the as-grown crystal and the homogeneous growth steps on the {112} face were observed. The four-order diffraction peaks of the {101} faces were evident. The transmittance of the crystal sample of 2 mm thickness is up to 65% in the region of 700-6500 cm(-1). The results demonstrated that the improved new growth method of AgGa1-xInxSe2 single crystals is promising and the quality of the grown crystals is good, and after annealing, the crystals can be used for IR nonlinear optical devices. (c) 2008 Elsevier Ltd All rights reserved.