The growth of SiGe crystals on a V-groove patterned Si(110) substrate and the fabrication of pMOSFET using this material were carried out. The crystalline and surface morphologies were significantly improved compared to those of a film grown on a planar Si(110) Substrate. A self-organized selective growth was observed, which was attributed to the local enhancement of the sticking coefficient. A significant enhancement of drain conductance was accomplished, which was attributed to the lower effective mass of strained SiGe crystal which became effective by the improvement of crystalline morphology. (C) 2008 Elsevier B.V. All rights reserved.