To achieve the high-temperature growth of heteroepitaxial InSb films on the InSb bi-layer, we studied the influence of substrate temperature Of first layer deposition (Ts1) on the two-step growth procedure. Although the growth at higher Ts1 of 240 and 280 degrees C is difficult to achieve using the usual procedure due to the desorption of In atoms from the InSb bi-layer, it can be realized by means of the adsorption of excess Sb atoms onto an initial InSb bi-layer prepared via root 7 x root 3-In surface reconstruction. The high-temperature growth of 30 degrees-rotated InSb films at 420 degrees C was demonstrated on a Si(l 11) substrate with a InSb bi-layer. The electron mobility of the InSb film grown at 420 degrees C was about 20,000 cm(2)/V s at RT. (C) 2008 Elsevier B.V. All rights reserved.