This paper reports the development of an InSb photovoltaic infrared sensor (InSb PVS) operating at room temperature for temperature measurements. The InSb PVS consists of 910 InSb p(+)-p(-)-n(+) photodiodes connected in series on a semi-insulating GaAs (100) substrate. An Al0.17In0.83Sb barrier layer was grown between the p(+) and p(-) layers to reduce the diffusion of photo-excited electrons. As the InSb PVS operates in a photovoltaic mode, no thermal insulation is required, enabling its miniaturized plastic molding package. The sensitivity of the InSb PVS was 127 mu V/K, and a noise equivalent temperature difference (NETD) of 1.0 mK/Hz(1/2) was obtained at room temperature. The results demonstrate the potential for the sensor to be used both in non-contact thermometry, as well as human body detection. (C) 2008 Elsevier B.V. All rights reserved.