This paper describes photoluminescence (PL) properties of Pb1-xSnxTe/CdTe quantum wells (QWs) grown on (1 0 0)-oriented GaAs substrates by molecular beam epitaxy. Despite the difference in crystal structure between these two tellurides, two-dimensional QWs with an abrupt heterointerface were formed at a low growth temperature of 220 degrees C. Highly efficient midinfrared PL was observed from the QWs even at room temperature. Control of the Sn content in QWs allowed tuning of the PL peak energy in a wide range of a 3-5 mu m atmospheric window. Considering effects of both the strain-induced band deformation and the quantum confinement in QWs, the transition energy observed was found to agree well with theoretical calculation. (C) 2008 Elsevier B.V. All rights reserved.