We have investigated the initial growth of Mn on GaAs(0 0 1)-c(4 x 4)alpha reconstructed surfaces at a substrate temperature of 320 degrees C using scanning-tunneling-microscopy. Up to the nominal deposition of 2 atomic layers of Mn, Mn grows on GaAs(0 0 1)-c(4 x 4)alpha reconstructed surfaces by the mechanism of double-layer formation and maintains a zincblende-type structure. (C) 2008 Elsevier B.V. All rights reserved.