BeZnSeTe/(MgSe/BeZnTe) double heterostructures were fabricated on InP substrates by molecular beam epitaxy and their optical exciting laser properties were evaluated. Yellow-green lasing at 564 nm at room temperature was achieved for the first time. The threshold excitation power density was 149 kW/cm(2) when the cavity length was 2 mm. The threshold power density linearly decreased with a decrease in the inverse of cavity length, which agreed with the theoretical expectation. The potential of BeZnSeTe for the use as an active layer for yellow-green laser diodes has been proved. (C) 2009 Elsevier B.V. All rights reserved.