We studied local segregation of impurities, including boron, phosphorus and oxygen, at an interface between the melt and crystal during crystal growth of silicon with transverse magnetic fields. A three-dimensional global model that included local segregation based on local growth rate was used in this study. It was found that the distributions of boron and phosphorus at an interface become a saw-toothlike pattern in the case of a small crystal rotation rate, while the distribution of oxygen concentration was almost the same at different crystal rotation rates. The distributions of boron and phosphorus were determined by segregation. However, the oxygen concentration fields in the melt and the crystal are primarily influenced by the evaporation of oxygen from the melt surface and its incorporation into the melt from the crucible wall, rather than from the segregation dynamics at the melt/crystal interface. (C) 2009 Elsevier B.V. All rights reserved.