InGaN growth with various InN mole fractions on m-plane ZnO substrate by metalorganic vapor phase epitaxy

Kawai Y; Ohsuka S; Iwaya M; Kamiyama S; Amano H; Akasaki I

Journal of Crystal Growth, Vol.311, No.10, 2929-2932, 2009

DOI10.1016/j.jcrysgro.2009.01.061 Export Citation

InGaN growth with various InN mole fractions on m-plane ZnO substrate by metalorganic vapor phase epitaxy

Kawai Y, Ohsuka S, Iwaya M, Kamiyama S, Amano H, Akasaki I

We have demonstrated InxGa1-xN epitaxial growth with InN mole fractions of x=0.07 to 0.17 on an m-plane ZnO substrate by metalorganic vapor phase epitaxy for the first time. The crystalline quality of the epilayers was found to be much higher than that of epilayers grown on a GaN template on an m-plane SiC substrate. (C) 2009 Elsevier B.V. All rights reserved.

Keywords:Stresses;Metalorganic vapor phase epitaxy;Gallium compounds;Zinc compounds;Semiconducting III-V materials