Journal of Crystal Growth, Vol.311, No.10, 3003-3006, 2009
Low-frequency noise characteristics of GaN-based UV photodiodes with AlN/GaN buffer layers prepared on Si substrates
Nitride-based metal-semi conductor-metal ultraviolet (UV) photodetectors prepared on Si (111) substrate with stacked buffer layers were proposed and prepared. With 5 V applied bias, it was found that dark current of the fabricated device was only 7.95 x 10(-12) A. With an applied bias of 10V, it was found that peak responsivity, was 0.06A/W, corresponding to quantum efficiency of 21.2% while UV/visible rejection ratio was 244. With 5V applied bias, it was found that noise equivalent power, NEP and detectivity, D*, of our detector were 1.70 x 10(-13) Wand 1.18 x 10(13) cm Hz(0.5)W(-1), respectively. (C) 2009 Elsevier B.V. All rights reserved.