The non-doped AlAs/GaAs distributed Bragg reflectors (DBRs) with density of misfit dislocation (MD) close to zero had been obtained. The reduction of MD density was achieved by increasing temperature distribution homogeneity on the growing crystal in consequence of higher rotation rate of the wafer. Two structures of DBR were crystallized using molecular beam epitaxy (MBE) under the same optimal growth condition. The growth runs differ only in the rotation rate of the wafers. X-ray topograph showed no residual MDs in case of faster rotation. The DBR structure with residual MID density is still highly strained. No additional relaxation process has occurred, what was confirmed by an angular position of DBR zeroth-order peak on high-resolution X-ray diffractometry (HRXRD) rocking curve. (C) 2009 Elsevier B.V. All rights reserved.