The models for calculation of phase diagrams of semiconductor thin films with different substrates were proposed by considering the contributions of strain energy, the self-energy of misfit dislocations and surface energy to Gibbs free energy. The phase diagrams of the AlxIn1-xAs and AsxSb1-xAl thin films grown on the InP (1 0 0) substrate, and the AlxIn1-xSb thin films grown on the Insb (1 0 0) substrate at various thicknesses were calculated. The calculated results indicate that when the thickness of film is less than 1 mu m, the strain-induced zinc-blende phase appears, the region of this phase extends with decreasing of the layer thickness, and there is small effect of surface energies of liquid and solid phases on the phase diagrams. (C) 2009 Elsevier B.V. All rights reserved.